Tsu-Jae Liu with multi-color background

Research Expertise and Interest

integrated-circuit devices and technology

Research Description

Dr. Tsu-Jae Liu conducts research in advanced materials, fabrication processes, and devices for integrated circuits used for computing and memory. She has authored or co-authored over 560 publications and holds close to 100 patents. Her research has garnered many honors including the Ross M. Tucker AIME Electronics Materials Award (1992) for seminal work in polycrystalline silicon-germanium thin films, the DARPA Significant Technical Achievement Award (2000) for development of the FinFET (the transistor design used in all leading-edge computer chips today), the IEEE Kiyo Tomiyasu Award (2010) for contributions to nanoscale MOS transistors, memory devices, and MEMs devices, the Electrochemical Society Dielectric Science and Technology Division Thomas D. Callinan Award (2011) for excellence in dielectrics and insulation investigations, the Intel Outstanding Researcher in Nanotechnology Award (2012), the Semiconductor Industry Association University Researcher Award (2014), and the IEEE Aldert van der Ziel Award (2016).

Research activities are presently in energy-efficient electronic devices and technology, as well as materials, processes, and devices for integrated microsystems.

In the News

Leadership Philanthropy Funds New Engineering Student Center

Powered by a $30 million challenge match grant from an anonymous alum, UC Berkeley’s College of Engineering has raised more than $74 million in gifts to transform the engineering student center into a vibrant hub of learning and discovery, cross-disciplinary collaboration, innovation and entrepreneurship.

Three innovators elected to National Academy of Inventors

Three faculty members – Tsu-Jae King Liu and Eli Yablonovitch of electrical engineering and computer sciences and Daniel Portnoy of molecular and cell biology and public health – have been named fellows of the National Academy of Inventors.

Radical new Intel transistor based on UC Berkeley’s FinFET

In early May, Intel announced a radical new transistor design: a 3D device that will enable the production of integrated-circuit chips that operate faster with less power. The breakthrough has its roots in research begun in 1997 by a team led by Berkeley electrical engineers Chenming Hu, Jeff Bokor and Tsu-Jae King Liu.

Featured in the Media

Please note: The views and opinions expressed in these articles are those of the authors and do not necessarily reflect the official policy or positions of UC Berkeley.
February 25, 2020
Samuel K. Moore
At the IEEE International Electron Devices Meeting (IEDM) in San Francisco last December, researchers discussed their efforts to find ways of increasing the capacity of quantum computers, a tricky challenge because any solution needs to work at near absolute zero temperatures. Berkeley research led by engineering professor Tsu-Jae King Liu was presented by her graduate student Xiaoer Hu. They developed micrometer-scale electromechanical relays as ultralow-power alternatives to transistors, and made the happy discovery that the relays worked better at 4 K than at room temperature. That's because oxygen can interfere with conductivity at room temperature, while oxygen gets frozen out at cryogenic temperatures. "We didn't suspect ahead of time that these devices would operate so well at cryogenic temperatures," Professor Liu says. "In retrospect, we should have."
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